IRFR2607Z |
RFQ for IRFR2607Z Required Field |
 |
| Technical/Catalog Information | IRFR2607ZPBF |
| Vendor | International Rectifier |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 75V |
| Current - Continuous Drain (Id) @ 25° C | 42A |
| Rds On (Max) @ Id, Vgs | 22 mOhm @ 30A, 10V |
| Input Capacitance (Ciss) @ Vds | 1440pF @ 25V |
| Power - Max | 110W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 51nC @ 10V |
| Package / Case | DPak, SC-63, TO-252 (2 leads+tab) |
| FET Feature | Standard |
| Drawing Number | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | IRFR2607ZPBF IRFR2607ZPBF |
| Product | Manufacturers | Pack | D/C | |||||||||||||||||
| IRFR2607Z | - | TO-252 | 05+ |
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
Features |
| Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax |
|
Parameter |
Max. |
Units | |
|
Continuous Drain Current, VGS @ 10V (Silicon Limited) |
ID @ VGS = 10V, TC = 25°C |
45 |
A
|
|
Continuous Drain Current, VGS @ 10V |
ID @ VGS = 10V, TC = 100°C |
32 | |
|
Continuous Drain Current, VGS @ 10V (Package Limited) |
IDM |
42 | |
|
Pulsed Drain Current |
PD @ TC = 25°±25 |
180 |
W |
|
Power Dissipation |
110 |
W/K ? | |
|
Linear Derating Factor |
VGS |
±20 |
V |
|
Gate-to-Source Voltage |
EAS |
750 |
mJmW |
|
Single Pulse Avalanche Energy |
EAR |
96g |
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